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profet ? BTS410F2 data sheet 1 2013 - 10 - 15 + v bb in st signal gnd esd profet ? out gnd logic voltage sensor voltage source open load detection short circuit detection charge pump level shifter temperature sensor rectifier limit for unclamped ind. loads gate protection current limit 2 4 1 3 5 load gnd load v logic overvoltage protection smart high - s ide power switch features ? overload protection ? current limitation ? short circuit protection ? thermal shutdown ? overvoltage protection (including load dump) ? fast demagnetization of inductive loads ? reverse battery protection 1 ) ? undervoltage and overvoltage shutdown with auto - restart and hysteresis ? open drain diagnostic output ? open load detection in on - state ? cmos compatible input ? loss of ground and loss of v bb protection ? e lectro s tatic d ischarge ( esd ) protection ? green product (rohs compliant) ? aec qualified application ? ? c compatible power switch with diagnostic feedback for 12 v and 24 v dc grounded loads ? most suita ble for inductive loads ? replaces electromechanical relays, fuses and discrete circuits general description n channel vertical power fet with charge pump, ground referenced cmos compatible input and diagnostic feedback, monolithically integrated in smar t sipmos ? 1 ) with external current limit (e. g. resistor r gnd =150 ? ) in gnd connection, resistors in series with in and st connections , reverse load current limited by connected load. product summary overvoltage protection v bb(az) 65 v operating voltage v bb(on) 4.7 ... 42 v on - state resistance r on 220 m ? load current (iso) i l(iso) 1.8 a current limitation i l(scr) 2.7 a pg - to263 - 5 - 2
BTS410F2 data sheet 2 2013 - 10 - 15 maximum ratings at t j = 25 c unless otherwise specified parameter symbol values unit supply voltage (overvoltage protection see page 3 ) v bb 65 v load dump protection 2 ) v loaddump = u a + v s , u a = 13.5 v r i 3 ) = 2 ? , r l = 6.6 ? , t d = 400 ms, in= low or high v load dump 4 ) 100 v load current (short circuit current, see page 4 ) i l self - limited a operating t emperature range storage temperature range t j t stg - 40 ...+150 - 55 ...+150 c power dissipation (dc), t c ? 25 c p tot 50 w inductive load switch - off energy dissipation, single pulse v bb = 12v, t j,start = 150c, t c = 150c const. i l = 1.8 a, z l = 2. 3 h, 0 ? : e as 4.5 j electrostatic discharge capability (esd) in: (human body model) all other pins: acc. mil - std883d, method 3015.7 and esd assn. std. s5.1 - 1993 v esd 1 2 kv input voltage (dc) v in - 0.5 ... +6 v current through input pin (dc) current through status pin (dc) see internal circuit diagrams page 6 i in i st ? 5.0 ? 5.0 ma thermal characteristics parameter and conditions symbol values unit min typ max thermal resistance chip - case: junction - ambient (free air): r thjc r thja -- -- -- -- 2.5 75 k/w smd version, device on pcb 5 ) : -- 35 -- 2 ) supply voltages higher than v bb(az) require an external current limit for the gnd and status pins, e.g. with a 150 ? resistor in the gnd connection and a 15 k ? resistor in series with the status pin. a resistor for the protection of the input is integrated. 3 ) r i = internal resistance of the load dump test pulse generator 4 ) v load dump is setup without the dut connected to the generator per iso 7637 - 1 and din 40839 5 ) device on 50mm*50mm*1.5mm epoxy pcb fr4 with 6cm 2 (one layer, 70 ? m thick) copper area for v bb connection. pcb is vertical without blown air. pin symbol function 1 gnd - logic ground 2 in i input, activates the power switch in case of logical high signal 3 v bb + positive power supply voltage, the tab is shorted to this pin 4 st s diagnostic feedback, low on failure 5 out (load, l) o output to the load
BTS410F2 data sheet 3 2013 - 10 - 15 electrical characteristics parameter and conditions symbol values unit at t j = 25 c, v bb = 12 v unless otherwise specified min typ max load switching capabilities and characteristics on - state resistance (pin 3 to 5) i l = 1.6 a t j =25 c: t j =150 c: r on -- 190 390 220 440 m ? nominal load current, iso norm (pin 3 to 5) v on = 0.5 v, t c = 85 c i l(iso) 1.6 1.8 -- a output current (pin 5 ) while gnd disconnected or gnd pulled up, v bb =30 v, v in = 0, see diagram page 7 , t j = - 40...+150c i l(gndhigh) - - -- 1 ma turn - on time in to 90% v out : turn - off time in to 10% v out : r l = 12 ? , t j = - 40...+150c t on t off 12 5 -- -- 125 85 ? s slew rate on 10 to 30% v out , r l = 12 ? , t j = - 40...+150c d v /dt on -- -- 3 v / ? s slew rate off 70 to 40% v out , r l = 12 ? , t j = - 40...+150c - d v /dt off -- -- 6 v / ? s operating parameters operating voltage 6 ) t j = - 40...+150c: v bb(on) 4.7 -- 42 v undervoltage shutdown t j =25c: t j = - 40...+150c: v bb(under) 2.9 2.7 -- -- 4.5 4.7 v undervoltage restart t j = - 40. ..+150c: v bb(u rst) -- -- 4.9 v undervoltage restart of charge pump see diagram page 13 v bb(ucp) -- 5.6 6.0 v undervoltage hysteresis ? v bb(under) = v bb(u rst) - v bb(under) ? v bb(under) -- 0.1 -- v overvoltage shutdown t j = - 40...+150c: v bb(over) 42 -- 52 v overvoltage restart t j = - 40...+150c: v bb(o rst) 40 -- -- v overvoltage hysteresis t j = - 40...+150c: ? v bb(over) -- 0.1 -- v overvoltage protection 7 ) t j = - 40...+150c: i bb =4 ma v bb(az) 65 70 -- v standby current (pin 3) t j = - 40...+25c : v in =0 t j = 150c: i bb(off) -- -- 10 18 15 25 ? a leakage output current (included in i bb(off) ) v in =0 i l(off) -- -- 20 ? a operating current (pin 1) 8 ) , v in =5 v, t j = - 40...+150c i gnd -- 1 2.1 ma 6 ) at supply voltage increase up to v bb = 5.6 v typ without charge pump, v out ? v bb - 2 v 7 ) meassured without load . see also v on(cl) in table of protection functions and circuit diagram page 7 . 8 ) add i st , if i st > 0, add i in , if v in >5.5 v
BTS410F2 parameter and conditions symbol values unit at t j = 25 c, v bb = 12 v unless otherwise specified min typ max data sheet 4 2013 - 10 - 15 protection functions 9 ) initial p eak short circuit current limit (pin 3 to 5) 10 ) , ( max 450 ? s if v on > v on(sc) ) i l(scp) t j = - 40c: t j =25c: t j =+150c: 4.0 3.5 2.0 -- 5.5 3.5 11 10 7.5 a overload shutdown current limit i l(scr) v on = 8 v, t j = t jt (see timing diagrams, page 11 ) -- 2.7 -- a short circuit shutdown delay after input pos. slope v on > v on(sc) , t j = - 40..+150c: min value valid only, if input "low" time exceeds 60 ? s t d(sc) -- -- 450 ? s output clamp (inductive load switch off) at v out = v bb - v on(cl) i l = 40 ma, t j = - 40..+150c: v on(cl) 61 68 73 v i l = 1 a, t j = - 40..+150c: -- -- 75 short circuit shutdown detection voltage(pin 3 to 5) v on(sc) -- 8.5 -- v thermal overload trip temperature t jt 150 -- -- c thermal hysteresis ? t jt -- 10 -- k reverse battery (pin 3 to 1) 11 ) - v bb -- -- 32 v diagnostic characteristics open load detection current (on - condition) t j = - 40 ..150c: i l (ol) 2 -- 1 50 ma 9 ) integrated protection functions are designed to prevent ic destruction under fault conditions desc ribed in the data sheet. fault conditions are considered as outside normal operating range. protection functions are not designed for continuous repetitive operation. 10 ) short circuit current limit for max. duration of t d(sc) max =450 ? s, prior to shutdow n 11 ) requires 150 ? resistor in gnd connection. the reverse load current through the intrinsic drain - source diode has to be limited by the connected load. note that the power dissipation is higher compared to normal operating conditions due to th e voltage drop across the intrinsic drain - source diode. the temperature protection is not active during reverse current operation! input and status currents have to be limited (see max. ratings page 2 and circuit page 7 ).
BTS410F2 parameter and conditions symbol values unit at t j = 25 c, v bb = 12 v unless otherwise specified min typ max data sheet 5 2013 - 10 - 15 input and status feedback 12 ) input turn - on threshold voltage t j = - 40..+150c: v in(t+) 1.5 -- 2.4 v input turn - off threshold voltage t j = - 40..+150c: v in(t - ) 1.0 -- -- v input threshold hysteresis ? v in(t) -- 0.5 -- v ? off state input cur rent (pin 2), v in = 0.4 v i in(off) 1 -- 30 ? a on state input current (pin 2), v in = 5 v i in(on) 10 25 70 ? a status invalid after positive input slope (short circuit) t j = - 40 ... +150c: t d(st sc) -- -- 450 ? s status invalid after positive input slope (open load) t j = - 40 ... +150c: t d(st) 300 -- 1400 ? s status output (open drain) zene r limit voltage t j = - 40...+150c, i st = +50 ua: st low voltage t j = - 40...+150c, i st = +1.6 ma: v st(high) v st(low) 5.0 -- 6 -- -- 0.4 v 12 ) if a ground resistor r gnd is used, add the voltage drop across this resistor.
BTS410F2 data sheet 6 2013 - 10 - 15 truth table input - output status level level 412 b2 410 d2 410 e2 /f2 410 g2 410 h2 normal operation l h l h h h h h h h h h h h open load l h 13 ) h l h h l h l h l l h short circuit to gnd l h l l h l h l h l h h h l short circuit to v bb l h h h l h h h (l 14 ) ) h h (l 14 ) ) h h (l 14 ) ) l h over tem - perature l h l l l l l l l l l l l l under - voltage l h l l l 15 ) l 15 ) l 15 ) l 15 ) h h h h h h over voltage l h l l l l l l h h h h h h l = "low" level x = don't care z = high impedance, potential depends on external circuit h = "high" level status sign al after the time delay shown in the diagrams (see fig 5. page 12 ... 13 ) 13 ) power transistor off, high impedance, versions bts 410h, bts 412b: internal pull up current source for open load detection. 14 ) low resistance short v bb to output may be detected in on - state by the no - load - detection 15 ) no current sink capability during undervoltage shutdown terms input circuit (esd protection) zd i1 6 v typ., esd zener diodes are not t o be used as voltage clamp at dc conditions. operation in this mode may result in a drift of the zener voltage (increase of up to 1 v). status output esd - zener diode: 6 v typ., max 5 ma; r st(on) < 250 ? at 1.6 ma, esd zener diodes are not to be used as voltage clamp at dc conditions. operation in this mode may result in a drift of the zener voltage (increase of up to 1 v). profet v in st out gnd bb v st v in i st i in v bb i bb i l v out i gnd v on 1 2 4 3 5 r gnd in gnd i r zd zd i i i1 i2 esd- st gnd esd- zd +5v r st(on)
BTS410F2 data sheet 7 2013 - 10 - 15 short circuit detection fault condition: v on > 8.5 v typ.; in high inductive and overvoltage output clamp v on clamped to 6 8 v typ. overvolt. and reverse batt. protection v z1 = 6.2 v typ., v z2 = 70 v typ., r gnd = 150 ? , r in , r st = 15 k ? open - load detection on - state diagnostic condition: v on < r on * i l(ol) ; in high gnd disconnect any kind of load. in case of input=high is v out ? v in - v in(t+) . due to v gnd >0, no v st = low signal available. gnd disconnect with gn d pull up any kind of load. if v gnd > v in - v in(t+) device stays off due to v gnd >0, no v st = low signal available. short circuit detection logic unit + v bb out v on + v bb out gnd p r ofe t v z v on + v bb in st st r in r gnd gnd r signal gnd logic p r o fe t v z2 v z1 open load detection logic unit + v bb out on v on profet v in st out gnd bb v bb 1 2 4 3 5 v in v st v gnd profet v in st out gnd bb v bb 1 2 4 3 5 v gnd v in v st
BTS410F2 data sheet 8 2013 - 10 - 15 v bb disconnect with energized inductive load normal load current can be handled by the profet itself. v bb disconnect with charged exter nal inductive load if other external inductive loads l are connected to the profet, additional elements like d are necessary. inductive load switch - off energy dissipation energy stored in load inductance: e l = 1 / 2 l i 2 l while demagnetizing l oad inductance, the energy dissipated in profet is e as = e bb + e l - e r = ? on(cl) i l (t) dt, with an approximate solution for r l ? 0 ? : e as = i l l 2 r l ( v bb + |v out(cl) |) ln (1+ i l r l |v out ( cl ) | ) maximum allowable load inductance fo r a single switch off l = f (i l ); t j,start = 150c, t c = 150c const., v bb = 12 v, r l = 0 ? l [mh] i l [a] profet v in st out gnd bb v bb 1 2 4 3 5 high profet v in st out gnd bb 1 2 4 3 5 v bb high s d profet v in st out gnd bb = e e e e as bb l r e load l r l { z l 100 1000 10000 1.5 1.75 2 2.25 2.5 2.75 3
BTS410F2 data sheet 9 2013 - 10 - 15 typ. transient thermal impedance chip case z thjc = f (t p , d), d=t p /t z thjc [k/w] t p [s] 0.01 0.1 1 10 1e-5 1e-4 1e-3 1e-2 1e-1 1e0 1e1 0 0.01 0.02 0.05 0.1 0.2 0.5 d=
BTS410F2 data sheet 10 2013 - 10 - 15 options overview all versions: high - side switc h, input protection, esd protection, load dump and reverse battery protection with 150 ? type bts 412 b2 410d2 410e2 410f2 410g2 410h2 307 308 logic version b d e f g h overtemperature protection with hysteresis t j >150 c, latch function 16 ) 17 ) t j >150 c, with auto - restart on cooling x x x x x x x x short circuit to gnd protection switches off when v on >3.5 v typ. and v bb > 7 v typ 16 ) (when first turned on after app rox. 150 ? s) x x switches off when v on >8.5 v typ. 16 ) (when first turned on after approx. 150 ? s) achieved through overtemperature protection x x x x x x open load detection in off - state with sensing current 30 ? a typ. in on - stat e with sensing voltage drop across power transistor x x x x x x x x undervoltage shutdown with auto restart x x x x x x x x overvoltage shutdown with auto restart 18 ) x x x x x x - x status feedback for overtemperature short circuit to gnd sh ort to v bb open load undervoltage overvoltage x x x x x x x x - 19 ) x x x x x - 19 ) x - - x x - 19 ) x - - x - - 19 ) x - - x x x x - - x x x x x - x x x x - - status output type cmos open drain x x x x x x x x output negative voltage transient limit (fast inductive load switch off) to v bb - v on(cl) x x x x x x x x load current limit high level (can handle loads with high inrush currents) low level (better protection of application) x x x x x x x x protection against loss of gnd x x x x x x x x 16 ) latch except when v bb - v out < v on(sc) after shutdown. in most cases v out = 0 v after shutdown ( v out ? 0 v only if forced externa lly). so the device remains latched unless v bb < v on(sc) (see page 4 ). no latch between turn on and t d(sc) . 17 ) with latch function. reseted by a) input low, b) undervoltage 18 ) no auto restart after overvoltage in case of short circuit 19 ) l ow resistance short v bb to output may be detected in on - state by the no - load - detection
BTS410F2 data sheet 11 2013 - 10 - 15 timing diagrams figure 1 a : v bb turn on: in case of too early v in =high the device may not turn on (curve a) t d(bb in) approx. 150 ? s figure 2 a : switching an inductive load *) if the time constant of load is too large, open - load - status may occur figure 3 a : turn on into short circuit, t d(sc) approx. -- ? s if v bb - v out > 8.5 v typ. figure 3 b : turn on into overload, heating up may require several seconds, v bb - v out < 8.5 v typ. in v out t v bb st open drain a a t d(bb in) in st l t v i *) out t d(st) i l(ol) in st out l t v i t d(sc) in st l t i l(scr) i l(scp) i
BTS410F2 data sheet 12 2013 - 10 - 15 figure 3 c : short circuit while on: **) current peak appro x. 20 ? s figure 4 a : overtemperature, reset if (in=low) and ( t j < t jt ) *) st goes high , when v in =low and t j < t jt figure 5 a : open load: detection in on - state, turn on/off to open load figure 5 b : open load: detection in on - state, open load occurs in on - state t d(st ol1) = tbd ? s typ., t d(st ol2) = tbd ? s typ in st out l t v i **) in st out j t v t in st out l t v i open t d(st) in st out l t v i open normal normal t d(st ol1) t d(st ol2)
BTS410F2 data sheet 13 2013 - 10 - 15 figure 6 a : undervoltage: figure 6 b : undervoltage restart of charge pump charge pump starts at v bb(ucp) =5.6 v typ. figure 7 a : overvoltage: figure 9 a : overvoltage at short circuit shutdown: overvoltage due to power line inductance. no overvoltage auto - restart of profet after short circuit shutdown. in v out t v bb st open drain v v bb(under) bb(u rst) bb(u cp) v bb(under) v v bb(u rst) v bb(over) v bb(o rst) v bb(u cp) off-state on-state v on(cl) v bb v on off-state in v out t v bb st on(cl) v v bb(over) v bb(o rst) in v out t v bb st i l v bb(o rst) output short to gnd short circuit shutdown
bts410 f2 data sheet 14 2013 - 10 - 15 package and ordering code all dimensions in mm pg - to263 - 5 - 2 ordering code bts410 f2 e3062a sp001104818 published by infineon technologies ag , d - 81 726 mnchen ? infineon technologies ag 2013 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. terms of delivery and rights to techn ical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non - infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information fo r further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies representatives worldwide (see address list). warnings due to technical requireme nts components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life - support devices or systems with the express writte n approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life - support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems a re intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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